10.6084/M9.FIGSHARE.C.6209893
Yu Xue
Yu
Xue
RanFeng Gan
RanFeng
Gan
kaixuan chen
kaixuan
chen
gengxin chen
gengxin
chen
ziliang ruan
ziliang
ruan
Junwei Zhang
Junwei
Zhang
Jie Liu
Jie
Liu
Daoxin Dai
Daoxin
Dai
Changjian Guo
Changjian
Guo
Liu Liu
Liu
Liu
Breaking the bandwidth limit of a high-quality-factor ring modulator based on thin-film lithium niobate
Growing global data traffic requires high-performance modulators with a compact size, a large bandwidth, a low optical loss, and a small power consumption. A careful trade-off among these parameters usually has to be made when designing such a device. Here, we propose and demonstrate an electro-optic ring modulator on the thin-film lithium niobate platform without compromising between any performances. The device exhibits a low on-chip loss of about -0.15dB with a high intrinsic Q-factor of 7.7×10⁵. Since a pure coupling modulation is employed, the photon life-time is no longer a limiting factor for the modulation speed. A large electro-optic bandwidth is obtained without any roll-off up to 67 GHz. The device, with a footprint of 3.4 mm×0.7 mm, also exhibits a low half-wave voltage of 1.75 V, corresponding to a half-wave voltage length product of 0.35 V∙cm considering the 2-mm long modulation section. Driverless data transmission up to 240 Gb/s is also demonstrated.
Uncategorized
Optica Publishing Group
2022
2022-10-07
2022-10-07
Collection
CC BY 4.0