10.4229/25THEUPVSEC2010-3BV.2.81
Genevée, P.
P.
Genevée
Donsanti, F.
F.
Donsanti
Renou, G.
G.
Renou
Lincot, D.
D.
Lincot
Sulfur Based Materials Deposited by ALD for Buffer Layers in CIGS Solar Cells
WIP-Munich
2010
Article
Thin Film Solar Cells
CIS and Other (II-VI) Ternary Thin Film Solar Cells
2010-10-28
2010
en
3-936338-26-4
3 pages
1644 kb
application/pdf
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Spain; 3425-3427
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3425-3427
In this work different studies are developed on sulfur based materials deposited by Atomic Layer
Deposition (ALD) used as buffer layer in CIGS solar cells. Two of the most promising cadmium free materials for the
buffer layer are zinc sulfide and indium sulfide based materials (ZnS, Zn(S,O,OH), In 2S3, InxSy, …). It has been
demonstrated that ALD used for the deposition of ZnS and In2S3 allows to reach high efficiencies with an excellent
thickness control of the layers and a good repeatability. We have applied this deposition method to sputtered CIGSSe
absorbers and we have confirmed these good results compared with a classical CBD-CdS process.
A bilayer ZnS/In2S3 structure is also investigated and the results are compared with those reported using a Spray-ILGAR
deposition method. Finally first results on the synthesis of gallium sulfide layers are exposed.