10.4229/25thEUPVSEC2010-2DV.1.37
Sugimura, E.
Tsujii, S.
Hirata, K.
Fuyuki, A.
Fuyuki, T.
Distinction of Crystal Defects by Temperature Dependence of Electroluminescence
WIP-Munich
2010
Wafer-Based Silicon Solar Cells and Materials Technology
Mono- and Multicrystalline Silicon Materials and Cells
2010-10-28
eng
Article
3-936338-26-4
4 pages
6093 kb
application/pdf
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2554-2557
The electroluminescence (EL) imaging technique is a powerful and fast characterization tool
providing spatially resolved information of material properties and defect areas. The EL mechanism is two types.
The EL emission under forward-biased is proportional to the minority carrier in Silicon. The temperature
dependent by the EL resolved to separate between extrinsic defects and intrinsic material properties. The EL
under reverse-biased p-n junction is closely related to electrical breakdown. We report a detailed mechanism of
intrinsic defect by EL intensity of different temperature and separate defect type using EL imaging of temperature
dependent from forward-biased and reverse-biased EL.