10.4229/25THEUPVSEC2010-1DV.2.38
Cánovas, E.
E.
Cánovas
Fuertes Marrón, D.
D.
Fuertes Marrón
Martí Vega, A.
A.
Martí Vega
Luque, A.
A.
Luque
Stanley, C.R.
C.R.
Stanley
Farmer, C.D.
C.D.
Farmer
Bett, A.W.
A.W.
Bett
Optoelectronic Characterisation of Intermediate Band Solar Cells by Photoreflectance: Comparison to Other Advanced Architectures
WIP-Munich
2010
Article
Advanced Photovoltaics: New Concepts and Ultra-high Efficiency
Fundamental Studies
2010-10-28
2010
en
3-936338-26-4
4 pages
2318 kb
application/pdf
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Spain; 428-431
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 428-431
The fabrication and design of novel materials and devices for advanced photovoltaics, like the
intermediate-band solar cell (IBSC), requires the use of specific characterization tools providing information about
their optoelectronic properties. We have tested the suitability of photoreflectance for the characterization of IBSC
prototypes based on quantum dots and compared the results obtained with those predicted by the theory.
Nonidealities in operative devices have been identified and detailed information has been obtained about the
electronic structure of the materials. We have compared PR spectra of IBSCs with those obtained from alternative
device architectures, namely a triple-junction solar cell and a multi-quantum well structure. Some general
conclusions are drawn demonstrating the potential of the technique.