10.4121/COLLECTION:SILAS
Technische Universiteit Eindhoven
Technische Universiteit Eindhoven
Masters and Scholars of the University of Oxford The Chancellor
Masters and Scholars of the University of Oxford
The Chancellor
Friedrich-Schiller-Universität Jena
Friedrich-Schiller-Universität Jena
Universität Llinz
Universität Llinz
IBM Research GmbH
IBM Research GmbH
Technische Universität München
Technische Universität München
SiLAS (Silicium Laser) Collection
4TU.Centre for Research Data
2021
Collection
Quantum Physics
Nanotechnology
Condensed Matter Physics
Collection: SiLAS (Silicium Laser) Collection
direct bandgap
hexagonal SiGe
light emission
nanolasers
2021-01-18
2
This collection contains results of the EU H2020 project “SiLAS: Silicon Laser" (programme H2020-EU.1.2.1.-FET Open; grant agreement: 735008). The project aims to revolutionize the electronics industry by adding intra-chip and chip-to-chip communication at the speed of light, offering a significantly reduced energy consumption. Cubic crystal phase SiGe is known to be great for electronics. The project proposes to develop hexagonal crystal phase SiGe (Hex-SiGe) which features a direct bandgap and will add photonic capabilities to electronics. Direct bandgap silicon has been the holy grail of the semiconductor industry for many years, since it would allow integrating both electronic and optical functionalities on a silicon platform. Recent theoretical calculations predict that hexagonal crystal phase SixGe1-x features a tunable direct bandgap from 1380-1800 nm, exactly coinciding with the low loss window for optical fibre communications. The project has recently developed a generic approach to grow defect-free hexagonal SixGe1-x with tunable composition. The project proposes to demonstrate efficient light emission from direct bandgap SiGe, followed by the development of a SiGe nanolaser. Work towards CMOS integration is included. The demonstration of a HexSiGe nanolaser will serve as a game-changer for transforming the electronics industry.