10.18126/M2K041
Bergeron, Hadallia
Hadallia
Bergeron
Sangwan, Vinod K.
Vinod K.
Sangwan
McMorrow, Julian J.
Julian J.
McMorrow
Campbell, Gavin P.
Gavin P.
Campbell
Balla, Itamar
Itamar
Balla
Liu, Xiaolong
Xiaolong
Liu
Bedzyk, Michael J.
Michael J.
Bedzyk
Marks, Tobin J.
Tobin J.
Marks
Hersam, Mark C.
Mark C.
Hersam
Chemical vapor deposition of monolayer MoS2 directly on ultrathin Al2O3 for low-power electronics
Applied Physics Letters
2017
Dataset
chemical vapor deposition
field-effect transistors
atomic layer deposition
metal insulator semiconductor structures
monolayers
Mark C. Hersam
2017-10-26T03:36:25Z
2017-10-26T03:36:25Z
2017-01
doi.org/10.1063/1.4975064
http://aip.scitation.org/doi/10.1063/1.4975064
This data corresponds to the characterization of a transfer-free ultrathin heterostructure of a 2D semiconductor and high-k dielectric, and the resulting field-effect transistors. Monolayer MoS2 was grown directly via chemical vapor deposition on 20 nm of amorphous alumina deposited via atomic layer deposition on a silicon substrate. This method of integrating 2D MoS2 with a high-k dielectric results in superior performance in low-power electronics figures of merit. DOI: doi.org/10.1063/1.4975064
Northwestern University