{"data":{"id":"10.6084/m9.figshare.7974572","type":"dois","attributes":{"doi":"10.6084/m9.figshare.7974572","prefix":"10.6084","suffix":"m9.figshare.7974572","identifiers":[],"alternateIdentifiers":[],"creators":[{"name":"Seham Reef Alharbi","affiliation":[],"nameIdentifiers":[]},{"name":"Qasrawi, Atef Fayez","nameType":"Personal","givenName":"Atef Fayez","familyName":"Qasrawi","affiliation":[],"nameIdentifiers":[]}],"titles":[{"title":"Characterization of the Ge/Bi2O3 Interfaces"}],"publisher":"SciELO journals","container":{},"publicationYear":2019,"subjects":[{"subject":"90499 Chemical Engineering not elsewhere classified","subjectScheme":"FOR"},{"subject":"FOS: Chemical engineering","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Chemical engineering","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"91207 Metals and Alloy Materials","subjectScheme":"FOR"},{"subject":"FOS: Materials engineering","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Materials engineering","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"91299 Materials Engineering not elsewhere classified","subjectScheme":"FOR"}],"contributors":[],"dates":[{"date":"2019-04-10","dateType":"Created"},{"date":"2019-04-10","dateType":"Updated"},{"date":"2019","dateType":"Issued"}],"language":null,"types":{"ris":"DATA","bibtex":"misc","citeproc":"dataset","schemaOrg":"Dataset","resourceType":"Dataset","resourceTypeGeneral":"Dataset"},"relatedIdentifiers":[{"relationType":"IsSupplementTo","relatedIdentifier":"10.1590/1980-5373-mr-2018-0722","relatedIdentifierType":"DOI"}],"relatedItems":[],"sizes":["1162747 Bytes"],"formats":[],"version":null,"rightsList":[{"rights":"Creative Commons Attribution 4.0 International","rightsUri":"https://creativecommons.org/licenses/by/4.0/legalcode","schemeUri":"https://spdx.org/licenses/","rightsIdentifier":"cc-by-4.0","rightsIdentifierScheme":"SPDX"}],"descriptions":[{"description":"In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject 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