{"data":{"id":"10.6084/m9.figshare.5048329.v2","type":"dois","attributes":{"doi":"10.6084/m9.figshare.5048329.v2","prefix":"10.6084","suffix":"m9.figshare.5048329.v2","identifiers":[],"alternateIdentifiers":[],"creators":[{"name":"Ghoneim, Mohamed","nameType":"Personal","givenName":"Mohamed","familyName":"Ghoneim","affiliation":[],"nameIdentifiers":[]}],"titles":[{"title":"Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics"}],"publisher":"figshare","container":{},"publicationYear":2017,"subjects":[{"subject":"100604 Memory Structures","subjectScheme":"FOR"},{"subject":"FOS: Electrical engineering, electronic engineering, information engineering","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Electrical engineering, electronic engineering, information engineering","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"100705 Nanoelectronics","subjectScheme":"FOR"},{"subject":"FOS: Nanotechnology","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Nanotechnology","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"100706 Nanofabrication, Growth and Self Assembly","subjectScheme":"FOR"},{"subject":"100707 Nanomanufacturing","subjectScheme":"FOR"},{"subject":"100708 Nanomaterials","subjectScheme":"FOR"},{"subject":"100712 Nanoscale Characterisation","subjectScheme":"FOR"},{"subject":"100799 Nanotechnology not elsewhere classified","subjectScheme":"FOR"},{"subject":"100605 Performance Evaluation; Testing and Simulation of Reliability","subjectScheme":"FOR"}],"contributors":[],"dates":[{"date":"2017-05-30","dateType":"Created"},{"date":"2017-05-30","dateType":"Updated"},{"date":"2017","dateType":"Issued"}],"language":null,"types":{"ris":"DATA","bibtex":"misc","citeproc":"dataset","schemaOrg":"Dataset","resourceType":"Dataset","resourceTypeGeneral":"Dataset"},"relatedIdentifiers":[{"relationType":"IsIdenticalTo","relatedIdentifier":"10.6084/m9.figshare.5048329","relatedIdentifierType":"DOI"}],"relatedItems":[],"sizes":["6492838 Bytes"],"formats":[],"version":null,"rightsList":[{"rights":"Creative Commons Attribution 4.0 International","rightsUri":"https://creativecommons.org/licenses/by/4.0/legalcode","schemeUri":"https://spdx.org/licenses/","rightsIdentifier":"cc-by-4.0","rightsIdentifierScheme":"SPDX"}],"descriptions":[{"description":"Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are 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