{"data":{"id":"10.48550/arxiv.1112.4397","type":"dois","attributes":{"doi":"10.48550/arxiv.1112.4397","prefix":"10.48550","suffix":"arxiv.1112.4397","identifiers":[{"identifier":"1112.4397","identifierType":"arXiv"}],"alternateIdentifiers":[{"alternateIdentifierType":"arXiv","alternateIdentifier":"1112.4397"}],"creators":[{"name":"Liu, Han","nameType":"Personal","givenName":"Han","familyName":"Liu","affiliation":[],"nameIdentifiers":[]},{"name":"Ye, Peide D.","nameType":"Personal","givenName":"Peide D.","familyName":"Ye","affiliation":[],"nameIdentifiers":[]}],"titles":[{"title":"MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric"}],"publisher":"arXiv","container":{},"publicationYear":2011,"subjects":[{"lang":"en","subject":"Materials Science (cond-mat.mtrl-sci)","subjectScheme":"arXiv"},{"subject":"FOS: Physical sciences","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Physical sciences","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"}],"contributors":[],"dates":[{"date":"2011-12-19T16:36:33Z","dateType":"Submitted","dateInformation":"v1"},{"date":"2013-12-04T01:11:00Z","dateType":"Updated","dateInformation":"v1"},{"date":"2011-12","dateType":"Available","dateInformation":"v1"},{"date":"2011","dateType":"Issued"}],"language":null,"types":{"ris":"RPRT","bibtex":"article","citeproc":"article-journal","schemaOrg":"ScholarlyArticle","resourceType":"Article","resourceTypeGeneral":"Text"},"relatedIdentifiers":[{"relationType":"IsVersionOf","relatedIdentifier":"10.1109/led.2012.2184520","relatedIdentifierType":"DOI"}],"relatedItems":[],"sizes":[],"formats":[],"version":"1","rightsList":[{"rights":"arXiv.org perpetual, non-exclusive license","rightsUri":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/"}],"descriptions":[{"description":"We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as top-gate dielectric. Our C-V study of MOSFET structures shows good interface between 2D MoS2 crystal and ALD Al2O3. Maximum drain currents using back-gates and top-gates are measured to be 7.07mA/mm and 6.42mA/mm at Vds=2V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm^2/Vs. The highest current on/off ratio is over 10^8.","descriptionType":"Abstract"},{"description":"submitted to IEEE Electron Device Letters","descriptionType":"Other"}],"geoLocations":[],"fundingReferences":[],"xml":"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","url":"https://arxiv.org/abs/1112.4397","contentUrl":null,"metadataVersion":0,"schemaVersion":"http://datacite.org/schema/kernel-4","source":"mds","isActive":true,"state":"findable","reason":null,"viewCount":0,"viewsOverTime":[],"downloadCount":0,"downloadsOverTime":[],"referenceCount":0,"citationCount":0,"citationsOverTime":[],"partCount":0,"partOfCount":0,"versionCount":0,"versionOfCount":0,"created":"2022-03-12T22:05:08.000Z","registered":"2022-03-12T22:05:09.000Z","published":"2011","updated":"2022-03-12T22:05:09.000Z"},"relationships":{"client":{"data":{"id":"arxiv.content","type":"clients"}},"provider":{"data":{"id":"arxiv","type":"providers"}},"media":{"data":{"id":"10.48550/arxiv.1112.4397","type":"media"}},"references":{"data":[]},"citations":{"data":[]},"parts":{"data":[]},"partOf":{"data":[]},"versions":{"data":[]},"versionOf":{"data":[]}}}}