{"data":{"id":"10.15131/shef.data.4560562.v1","type":"dois","attributes":{"doi":"10.15131/shef.data.4560562.v1","prefix":"10.15131","suffix":"shef.data.4560562.v1","identifiers":[],"alternateIdentifiers":[],"creators":[{"name":"Zhou, Xinxin","nameType":"Personal","givenName":"Xinxin","familyName":"Zhou","affiliation":[],"nameIdentifiers":[{"schemeUri":"https://orcid.org","nameIdentifier":"https://orcid.org/0000-0001-9022-5032","nameIdentifierScheme":"ORCID"}]},{"name":"White, Benjamin","nameType":"Personal","givenName":"Benjamin","familyName":"White","affiliation":[],"nameIdentifiers":[]},{"name":"Meng, Xiao","nameType":"Personal","givenName":"Xiao","familyName":"Meng","affiliation":[],"nameIdentifiers":[]},{"name":"Shiyong Zhang","affiliation":[],"nameIdentifiers":[]},{"name":"MARINA GUTIERREZ","affiliation":[],"nameIdentifiers":[]},{"name":"MARK ROBBINS","affiliation":[],"nameIdentifiers":[]},{"name":"LUIS GOMEZ ROJAS","affiliation":[],"nameIdentifiers":[]},{"name":"NICK  NELMS","affiliation":[],"nameIdentifiers":[]},{"name":"Tan, Chee","nameType":"Personal","givenName":"Chee","familyName":"Tan","affiliation":[],"nameIdentifiers":[]},{"name":"Ng, Jo","nameType":"Personal","givenName":"Jo","familyName":"Ng","affiliation":[],"nameIdentifiers":[]}],"titles":[{"title":"Data for paper: Proton radiation effect on InAs avalanche photodiodes"}],"publisher":"The University of Sheffield","container":{},"publicationYear":2017,"subjects":[{"subject":"100508 Satellite Communications","subjectScheme":"FOR"},{"subject":"FOS: Electrical engineering, electronic engineering, information engineering","schemeUri":"http://www.oecd.org/science/inno/38235147.pdf","subjectScheme":"Fields of Science and Technology (FOS)"},{"subject":"FOS: Electrical engineering, electronic engineering, information engineering","subjectScheme":"Fields of Science and Technology (FOS)"}],"contributors":[],"dates":[{"date":"2017-01-18","dateType":"Created"},{"date":"2017-09-28","dateType":"Updated"},{"date":"2017","dateType":"Issued"}],"language":null,"types":{"ris":"DATA","bibtex":"misc","citeproc":"dataset","schemaOrg":"Dataset","resourceType":"Dataset","resourceTypeGeneral":"Dataset"},"relatedIdentifiers":[{"relationType":"IsIdenticalTo","relatedIdentifier":"10.15131/shef.data.4560562","relatedIdentifierType":"DOI"}],"relatedItems":[],"sizes":["1637892 Bytes"],"formats":[],"version":null,"rightsList":[{"rights":"Creative Commons Attribution 4.0 International","rightsUri":"https://creativecommons.org/licenses/by/4.0/legalcode","schemeUri":"https://spdx.org/licenses/","rightsIdentifier":"cc-by-4.0","rightsIdentifierScheme":"SPDX"}],"descriptions":[{"description":"The files correspond to experimental results in paper: “Proton radiation effect on InAs avalanche photodiodes” DOI: 10.1364/OE.25.002818. \u003cbr\u003e There are two types of files: -.PNG, which corresponds to the figures -.CSV, which are raw data in figures The work in this paper mainly focus on the experimental study of proton radiation effects on performance parameters of InAs APDs, whose sensitivity extends from visible light to ~ 3.5 mm. This is the first report demonstrating a comprehensive study of radiation damage effect on InAs APDs. The data consists of pre- and post-radiation results from InAs avalanche photodiodes: dark current, responsivity and avalanche gain. Three irradiation energies (10.0, 31.4, and 58.8 MeV) and four fluences (10\u003csup\u003e9\u003c/sup\u003e to 10\u003csup\u003e11\u003c/sup\u003e p/cm\u003csup\u003e2\u003c/sup\u003e) were tested. At the harshest irradiation condition (10.0 MeV energy and 10\u003csup\u003e11\u003c/sup\u003e p/cm\u003csup\u003e2\u003c/sup\u003e fluence) the APDs’ avalanche gain and leakage current showed a measurable degradation. However, the responsivity of the APDs was unaffected under all conditions tested. More details about these data/figures can be found in README 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